Market Research Future published a research report on “RF GaN Semiconductor Device Market Research Report - Global Forecast till 2027” – Market Analysis, Scope, Stake, Progress, Trends and Forecast to 2027

Market Analysis

Market Research Future (MRFR) predicts the global RF GaN semiconductor device market to reach USD 1,607.23 million at a CAGR of 20.3% from 2019–2025 (forecast period).

RF GaN is one of the new technologies for power electronics applications that require high-power density RF performance. RF-based power amplifiers are used in the transmitter circuitry of a variety of products and services. Because GaN has a broad bandgap, it has a strong breakdown field, allowing GaN devices to operate at higher voltages than conventional semiconductor devices.

The RF GaN Semiconductor Device is critical in the wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, and military communications. Furthermore, the rising demand for RF GaN devices in IT and telecommunications equipment would be a major driver of the market throughout the projection period. Gallium nitride (GaN) is currently widely employed to improve the performance of numerous devices in radio frequency (RF) and microwave applications. GaN is roughly 10% more efficient than laterally diffused MOSFET (LDMOS), resulting in significant energy savings at power levels of 600W or more, which is a major factor pushing the market. Furthermore, businesses are substantially investing in the development of novel devices for a variety of applications. NXP Semiconductors, for example, has used RF GaN semiconductor devices to develop numerous wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar.

COVID-19 Impact on the Global RF GaN Semiconductor Device Market

RF GaN is one of the new technologies for power electronics applications that require high-power density RF performance. The growing demand for power management devices, as well as the increasing adoption of power electronics in electric cars, are propelling the development of the power electronics market. However, the spread of COVID-19 has reduced demand for electric vehicles as a result of the economic crisis, which is reducing demand for RF GaN. Furthermore, prominent market participants are substantially investing in the development of novel devices for a variety of applications, which is projected to boost the RF GaN Semiconductor Device market growth.

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Key Players

MRFR recognizes the main players in the Global RF GaN Semiconductor Device Market as Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US), among others.

Market Segmentation

The global RF GaN semiconductor device market has been segmented based on material, applications, and end-user.

By material, the global RF GaN semiconductor device market has been segmented into GaN-On-Sic, GaN-On-Silicon, and GaN-On-Diamond.

By application, the global RF GaN semiconductor device market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, and others.

By end-user, the global RF GaN semiconductor device market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.

Regional Analysis

By region, the global RF GaN semiconductor device market has been segmented into North America, Europe, Asia Pacific, and the rest of the world.

Companies' increasing investments in the development of 5G technology are projected to contribute to market growth. For example, according to Ericsson's Mobility Report for June 2019, more than 2.6 billion 5G subscribers are estimated to be registered globally by the end of 2025, fuelling market growth throughout the projected period.

North America held the largest market share in 2018 due to the presence of several of the largest multinational corporations operating in the market, such as Raytheon Company, Cree, Inc., and Analog Devices Inc., which provide devices to end-users such as military & defense, IT & telecom, consumer electronics, and others. Companies' rising investments in 5G technologies are among the primary reasons driving the RF GaN semiconductor devices market across the region. North America is divided into three countries: the United States, Canada, and Mexico.

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