Market Research Future published a research report on “RF GaN Semiconductor Device Market Research Report - Global Forecast till 2027” – Market Analysis, Scope, Stake, Progress, Trends and Forecast to 2027
Market Research Future (MRFR) predicts the global RF GaN semiconductor device market to reach USD 1,607.23 million at a CAGR of 20.3% from 2019–2025 (forecast period).
RF GaN is one of the new technologies for power electronics applications that require high-power density RF performance. RF-based power amplifiers are used in the transmitter circuitry of a variety of products and services. Because GaN has a broad bandgap, it has a strong breakdown field, allowing GaN devices to operate at higher voltages than conventional semiconductor devices.
The RF GaN Semiconductor Device is critical in the wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, and military communications. Furthermore, the rising demand for RF GaN devices in IT and telecommunications equipment would be a major driver of the market throughout the projection period. Gallium nitride (GaN) is currently widely employed to improve the performance of numerous devices in radio frequency (RF) and microwave applications. GaN is roughly 10% more efficient than laterally diffused MOSFET (LDMOS), resulting in significant energy savings at power levels of 600W or more, which is a major factor pushing the market. Furthermore, businesses are substantially investing in the development of novel devices for a variety of applications. NXP Semiconductors, for example, has used RF GaN semiconductor devices to develop numerous wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar.
COVID-19 Impact on the Global RF GaN Semiconductor Device Market
RF GaN is one of the new technologies for power electronics applications that require high-power density RF performance. The growing demand for power management devices, as well as the increasing adoption of power electronics in electric cars, are propelling the development of the power electronics market. However, the spread of COVID-19 has reduced demand for electric vehicles as a result of the economic crisis, which is reducing demand for RF GaN. Furthermore, prominent market participants are substantially investing in the development of novel devices for a variety of applications, which is projected to boost the RF GaN Semiconductor Device market growth.
Get customized Sample with complete Toc, Inclusive of COVID-19 Industry Analysis @ https://www.marketresearchfuture.com/sample_request/8664
MRFR recognizes the main players in the Global RF GaN Semiconductor Device Market as Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US), among others.
The global RF GaN semiconductor device market has been segmented based on material, applications, and end-user.
By material, the global RF GaN semiconductor device market has been segmented into GaN-On-Sic, GaN-On-Silicon, and GaN-On-Diamond.
By application, the global RF GaN semiconductor device market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, and others.
By end-user, the global RF GaN semiconductor device market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others.
By region, the global RF GaN semiconductor device market has been segmented into North America, Europe, Asia Pacific, and the rest of the world.
Companies' increasing investments in the development of 5G technology are projected to contribute to market growth. For example, according to Ericsson's Mobility Report for June 2019, more than 2.6 billion 5G subscribers are estimated to be registered globally by the end of 2025, fuelling market growth throughout the projected period.
North America held the largest market share in 2018 due to the presence of several of the largest multinational corporations operating in the market, such as Raytheon Company, Cree, Inc., and Analog Devices Inc., which provide devices to end-users such as military & defense, IT & telecom, consumer electronics, and others. Companies' rising investments in 5G technologies are among the primary reasons driving the RF GaN semiconductor devices market across the region. North America is divided into three countries: the United States, Canada, and Mexico.
Ask Questions To The Experts @ https://www.marketresearchfuture.com/reports/rf-gan-semiconductor-device-market-8664
Market Research Future (MRFR) is a reliable firm that undertakes an extensive analysis of markets in various domains. Our teams of research analysts gather relevant data through painstaking primary and secondary research that aims to give clients a complete outlook on markets of their interest. The data is compared against third-party agencies and reputed organizations for estimating valuations and revenue projections.
MRFR’s goal in providing a comprehensive coverage of the market replete with latest trends, niches, developments, and insights can be lucrative for business needs. We aim to push our clients to the forefront by guiding them with astute information for making informed decisions. Our market intelligence can track down key issues in industries and be modified as per the fluctuations in economic scenarios. The reports are customized and offered as per a specific region or country and adhere to latest policies.
Market Research Future
Office No. 528, Amanora Chambers
Magarpatta Road, Hadapsar,
Pune - 411028
+1 646 845 9312